RADIATION AND CRYOGENIC TEST-RESULTS WITH A MONOLITHIC GAAS PREAMPLIFIER IN C-HFET TECHNOLOGY

Authors
DIBITONTO D KARPINSKI W LUBELSMEYER K PANDOULAS D PIERSCHEL G RENTE C SUBHANI K TENBUSCH F
Citation
D. Dibitonto et al., RADIATION AND CRYOGENIC TEST-RESULTS WITH A MONOLITHIC GAAS PREAMPLIFIER IN C-HFET TECHNOLOGY, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 350(3), 1994, pp. 530-537
Citations number
11
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
350
Issue
3
Year of publication
1994
Pages
530 - 537
Database
ISI
SICI code
0168-9002(1994)350:3<530:RACTWA>2.0.ZU;2-P
Abstract
We report test results with a monolithic GaAs preamplifier fabricated in industrial C-HFET technology irradiated with a total dose of 10(14) neutrons/cm2 and 100 Mrad gamma radiation and operated under cryogeni c conditions. The measured gate current of the input transistor of a f ew nA increases by < 10% after irradiation. For a 330 mum input FET wi dth, the equivalent noise charge (ENC) is typically 145 electrons per pF total input capacitance at a shaping time of 25 ns (bipolar) before irradiation and changes approximately by 10% after irradiation. Under cryogenic operation the corresponding input referred noise decreases by roughly a factor of two.