A 128X128-PIXEL STANDARD-CMOS IMAGE SENSOR WITH ELECTRONIC SHUTTER

A 128 x 128-pixel image sensor with a 20 s-10(-4) s electronic shutter has been integrated in a 1.2-mu m digital CMOS technology, Tile pixel cell consists of four PMOS transistors and a photodiode with antibloo ming suppression. Each pixel measures 23 mu m by 24 mu m and has a fil l factor of 25%. Current is used to transfer pixel signals to the colu mn readout amplifiers in order to minimize voltage swings on the highl y capacitive column lines. Correlated double sampling is used to reduc e intracolumn fixed pattern noise, The saturation voltage is 470 mV. T he peak output signal to noise ratio is 55 dB, and the optical dynamic range is 56 dB, The frame transfer rate is 1.7 ms per frame.