ELECTRONIC-STRUCTURE OF CLEAN INSULATING OXIDE SURFACES .1. A NUMERICAL APPROACH

Citation
J. Goniakowski et C. Noguera, ELECTRONIC-STRUCTURE OF CLEAN INSULATING OXIDE SURFACES .1. A NUMERICAL APPROACH, Surface science, 319(1-2), 1994, pp. 68-80
Citations number
63
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
319
Issue
1-2
Year of publication
1994
Pages
68 - 80
Database
ISI
SICI code
0039-6028(1994)319:1-2<68:EOCIOS>2.0.ZU;2-Q
Abstract
Systematic trends in the surface electronic structure of simple insula ting oxides are studied thanks to a quantum self-consistent numerical approach. Four oxides of various ionicity have been chosen: SrO, MgO, rutile TiO2 and alpha-quartz SiO2, and for each of them, several surfa ces, involving atoms with different coordination numbers, have been mo deled: the (100), (110) and (211) faces of the rocksalt oxides, the (1 10), (100) and (001) faces of rutile and the (0001) and (10 $($) over bar$$ 10) faces of quartz. We discuss the competition between electros tatic and covalent processes, through an analysis of the density of st ates characteristics, the gap width, the ionic charges and the surface energy.