SI B4C NARROW-BANDPASS MIRRORS FOR THE EXTREME-ULTRAVIOLET/

Citation
Jm. Slaughter et al., SI B4C NARROW-BANDPASS MIRRORS FOR THE EXTREME-ULTRAVIOLET/, Optics letters, 19(21), 1994, pp. 1786-1788
Citations number
15
Categorie Soggetti
Optics
Journal title
ISSN journal
01469592
Volume
19
Issue
21
Year of publication
1994
Pages
1786 - 1788
Database
ISI
SICI code
0146-9592(1994)19:21<1786:SBNMFT>2.0.ZU;2-Q
Abstract
We report the results of extreme-ultraviolet reflectance measurements and structural characterization of multilayer mirrors made by sequenti al sputter deposition of Si and BIC. Compared with Si/Mo multilayers, Si/B4C have a much narrower bandpass (delta lambda) and better off-pea k rejection but lower peak reflectance (Re). Mirrors with three differ ent designs gave the following results: R(0) = 0.275 and delta lambda = 0.31 nm at 13.1 nm and normal incidence; R(0) = 0.34 and delta lambd a = 1.1 nm at 18.2 nm and 45 degrees; and R(0) = 0.30 and delta lambda = 2.0 nm at 23.6 nm and 45 degrees. These multilayers exhibited excel lent stability on annealing at temperatures up to 600 degrees C.