CHEMICAL GAS ETCHING OF INP-BASED STRUCTURES

In this paper we present our results on chemical gas etching (CGE) of InP-based structures using Cl-2 as an etch gas. Structures are pattern ed using electron beam lithography and lift-off technique, 100 Angstro m Cr serving as an etch mask. Both etching rate and surface morphology of InP etched in CGE are investigated as a function of surface temper ature. Etching temperature of 280 degrees C is shown to produce surfac e roughness comparable to unetched InP. Finally, fabrication of shallo w etched InP/GaInAs wires with width as small as 75 nm is demonstrated .