METHOD TO OBTAIN LOW-DISLOCATION-DENSITY REGIONS BY PATTERNING WITH SIO2 ON GAAS SI FOLLOWED BY ANNEALING/

Authors
YAMAICHI E UEDA T GAO QZ YAMAGISHI C AKIYAMA M
Citation
E. Yamaichi et al., METHOD TO OBTAIN LOW-DISLOCATION-DENSITY REGIONS BY PATTERNING WITH SIO2 ON GAAS SI FOLLOWED BY ANNEALING/, JPN J A P 2, 33(10B), 1994, pp. 120001442-120001444
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
33
Issue
10B
Year of publication
1994
Pages
120001442 - 120001444
Database
ISI
SICI code
Abstract
A method to obtain low-dislocation-density regions in GaAs on Si has b een proposed. The method comprises performing the thermal cycle for Ga As, which is partially covered by SiO2 patterning, on Si. Dislocations in the GaAs layer on Si are gathered at the periphery of the SiO2 pat tern due to surface stress modulation. This method yields the dislocat ion density of less than 10(5) cm(-2) in the uncovered region.