OPTIMIZATION OF OPTICAL-DENSITY AND PLANARIZATION OF AN ANTI-REFLECTANT

Citation
Ek. Pavelchek et al., OPTIMIZATION OF OPTICAL-DENSITY AND PLANARIZATION OF AN ANTI-REFLECTANT, Microelectronic engineering, 35(1-4), 1997, pp. 217-220
Citations number
4
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
35
Issue
1-4
Year of publication
1997
Pages
217 - 220
Database
ISI
SICI code
0167-9317(1997)35:1-4<217:OOOAPO>2.0.ZU;2-W
Abstract
A series of ARC's have been prepared with optical densities ranging fr om 6-13/mu. Conformality of the ARC films was measured from 64% to 72% , and was not independent of optical density. Good line width control (less than 25 nm for 0.23 m lines) was obtained for ARC's over smooth reflective topography. CD variation over more severe topographies (a t ransparent topography and vertical edged topography) was poor for quar ter micron lines. The more conformal ARC's gave the best CD variation over transparent topography and over smooth reflective topography. The re was no observed correlation between optical density and CD variatio n.