We apply Green's function method, within a two-band model including th
e coupling between the conduction and light-hole bands, to Type-II tun
nel diodes with resonant interband tunneling. Our model is suitable fo
r studying dynamical responses, and is applied to the InAs/AlSb/GaSb/A
lSb/InAs structure. In particular, we present results important for de
vice applications, e.g., d.c. characteristics and a.c. admittances.