E. Bennett et al., CONTRIBUTION OF SIALIC-ACID TO THE VOLTAGE-DEPENDENCE OF SODIUM-CHANNEL GATING - A POSSIBLE ELECTROSTATIC MECHANISM, The Journal of general physiology, 109(3), 1997, pp. 327-343
A potential role for sialic acid in the voltage-dependent gating of ra
t skeletal muscle sodium channels (rSkM1) was investigated using Chine
se hamster ovary (CHO) cells stably transfected with rSkM1. Changes in
the voltage dependence of channel gating were observed after enzymati
c (neuraminidase) removal of sialic acid from cells expressing rSkM1 a
nd through the expression of rSkM1 in a sialylation-deficient cell lin
e (lec2). The steady-state half-activation voltages (V-a) of channels
under each condition of reduced sialylation were similar to 10 mV more
depolarized than control channels. The voltage dependence of the time
constants of channel activation and inactivation were also shifted in
the same direction and by a similar magnitude. In addition, recombina
nt deletion of likely glycosylation sites from the rSkM1 sequence resu
lted in mutant channels that gated at voltages up to 10 mV more positi
ve than wild-type channels. Thus three independent means of reducing c
hannel sialylation show very similar effects on the voltage dependence
of channel gating. Finally, steady-state activation voltages for chan
nels subjected to reduced sialylation conditions were much less sensit
ive to the effects of external calcium than those measured under contr
ol conditions, indicating that sialic acid directly contributes to the
negative surface potential. These results are consistent with an elec
trostatic mechanism by which external, negatively charged sialic acid
residues on rSkM1 alter the electric field sensed by channel gating el
ements.