CP(2)TICH(2)SI(ME(2))NSIME(3) - A SINGLE-SOURCE PRECURSOR TO TITANIUM-BASED CERAMIC THIN-FILMS BY CHEMICAL-VAPOR-DEPOSITION

Authors
CHANSOU B CHOUKROUN R VALADE L
Citation
B. Chansou et al., CP(2)TICH(2)SI(ME(2))NSIME(3) - A SINGLE-SOURCE PRECURSOR TO TITANIUM-BASED CERAMIC THIN-FILMS BY CHEMICAL-VAPOR-DEPOSITION, Applied organometallic chemistry, 11(3), 1997, pp. 195-203
Citations number
24
Categorie Soggetti
Chemistry Applied","Chemistry Inorganic & Nuclear
Journal title
Applied organometallic chemistry → ACNP
ISSN journal
02682605
Volume
11
Issue
3
Year of publication
1997
Pages
195 - 203
Database
ISI
SICI code
0268-2605(1997)11:3<195:C-ASPT>2.0.ZU;2-W
Abstract
The four-membered-ring heterocyclic molecule Cp(2)TiCH(2)Si(Me(2))NSiM e(3) (1; C-p = eta - C5H5) was studied as a single-source precursor to titanium-based ceramic thin films, Its decomposition was studied at a tmospheric and low pressure under nitrogen, argon and helium by TG-DTA -MS, Thin films containing the four elements of the metallacycle and o xygen were deposited on silicon substrates by low-pressure (20 Torr) c hemical vapor deposition (CVD) between 773 and 923 K. Films were chara cterized by SEM-EDS, XPS, EPMA-WDS and XRD analyses. (C) 1997 by John Wiley & Sons, Ltd.