THE INVESTIGATION OF GROWTH-CHARACTERISTICS OF SINGLE QUANTUM-WELLS GROWN ON (311)GAAS SUBSTRATES

Authors
ZHANG FJ HU ZM XI CY
Citation
Fj. Zhang et al., THE INVESTIGATION OF GROWTH-CHARACTERISTICS OF SINGLE QUANTUM-WELLS GROWN ON (311)GAAS SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 27(1), 1994, pp. 7-12
Citations number
12
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
27
Issue
1
Year of publication
1994
Pages
7 - 12
Database
ISI
SICI code
0921-5107(1994)27:1<7:TIOGOS>2.0.ZU;2-A
Abstract
High quality AlxGa1-xAs/GaAs single quantum wells have been grown succ essfully on (311)A and (311)B Si-doped GaAs substrates by molecular be am epitaxy (MBE) at 600 degrees C and 650 degrees C. Photoluminescence (PL) spectra of these samples are measured at 1.8 K. The calculations of the PL peak energies agree with those of experiments, suggesting t hat the conduction band offset at the interface between AlxGa1-xAs and GaAs is 65% and that the electron effective mass in both AlxGa1-xAs a nd GaAs in growth temperature on (311)A and (311)B substrates is discu ssed. We find that the surface of GaAs in (311)B can capture impuritie s more easily than that in (311)A.