RELIABILITY AND DEGRADATION BEHAVIORS OF SEMIINSULATING FE-DOPED INP BURIED HETEROSTRUCTURE LASERS FABRICATED BY RIE AND MOVPE

We clarified the degradation behaviors of semiinsulating buried hetero structure lasers in which mesa structures were fabricated by reactive ion etching (RIE) and then buried in semi-insulating Fe-doped InP grow n by metal organic vapor phase epitaxy (MOVPE). The degradation rate a nd mode correlated with the quality of the buried heterostructure (BH) interface. Based on the correlation, a condition for highly stable se miinsulating Fe-doped InP buried heterostructure (SIBH) lasers was dem onstrated and confirmed experimentally and statistically.