IMPURITY-RELATED PHOTOLUMINESCENCE FROM SILICON AT ROOM-TEMPERATURE

Authors
KING O HALL DG
Citation
O. King et Dg. Hall, IMPURITY-RELATED PHOTOLUMINESCENCE FROM SILICON AT ROOM-TEMPERATURE, Physical review. B, Condensed matter, 50(15), 1994, pp. 10661-10665
Citations number
22
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
50
Issue
15
Year of publication
1994
Pages
10661 - 10665
Database
ISI
SICI code
0163-1829(1994)50:15<10661:IPFSAR>2.0.ZU;2-V
Abstract
We report results for photoluminescence studies of an impurity-related defect system in 450 degrees C annealed Czochralski-grown silicon res ulting in optical emission with a wavelength near 1.7 mu m. The photol uminescence emission is found to have a significant intensity that per sists to room temperature. The external quantum efficiency at 300 K is measured to be approximately 2.5X10(-5).