EFFECT OF COMPOSITION AND ANNEALING CONDITIONS ON THE ELECTRICAL-PROPERTIES OF PB(ZRXTI1-X)O3 THIN-FILMS DEPOSITED BY THE SOL-GEL PROCESS

The effects of annealing temperature, Zr/Ti ratio and film lead conten t on the dielectric and ferroelectric properties of Pb(ZrxTi1-x)O3 Pt- based thin film capacitors (Pt/PZT/Pt/Ti/SiO2/Si) were investigated. T he PZT films were grown using a spin-on sol-gel process. It was found that a minimum annealing temperature of 650-degrees-C is required to o btain good ferroelectric properties. The polarization fatigue rate was found to increase with increasing annealing temperature and decreasin g Zr content. However, as the number of switching cycles increased pas sed 10(7)-10(8) cycles, the polarization values for the various Zr/Ti ratios and the various annealing temperatures became essentially equal . Changing the lead content of the PZT thin films had a smaller effect on their fatigue and ferroelectric properties than did the Zr/Ti rati o and annealing temperature. The small signal dielectric constant show ed a peak near the morphotropic phase boundary with a maximum value of about 600. The remanent and saturation polarization were largest near the morphotropic phase boundary and for the Ti-rich composition.