A MODEL OF DENSITY-OF-STATES IN AMORPHOUS SI, C AND SIC FROM TIME-OF-FLIGHT MEASUREMENT

The temperature dependence of the electron drift mobility in glow-disc harged undoped hydrogenated amorphous silicon, carbon and silicon carb ide films with stoichiometric compositional (a-Si0.5C0.5:H) has been m easured by the time-of-flight method. All films displayed the same beh aviour of the transient current and dispersion parameters, which can b e explained by assuming a gaussian distribution of tail states near th e conduction band. The results obtained results corroborated the commo n nature and degree of disorder of the conduction band tail in all fou r-coordinated amorphous semiconductors.