P-N-JUNCTION DIODE BY B-DOPED DIAMOND HETEROEPITAXIALLY GROWN ON SI-DOPED C-BN

Authors
TOMIKAWA T NISHIBAYASHI Y SHIKATA S SUMIYA H
Citation
T. Tomikawa et al., P-N-JUNCTION DIODE BY B-DOPED DIAMOND HETEROEPITAXIALLY GROWN ON SI-DOPED C-BN, DIAMOND AND RELATED MATERIALS, 3(11-12), 1994, pp. 1389-1392
Citations number
28
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
3
Issue
11-12
Year of publication
1994
Pages
1389 - 1392
Database
ISI
SICI code
0925-9635(1994)3:11-12<1389:PDBBDH>2.0.ZU;2-Q
Abstract
Boron-doped p-type diamond thin film was heteroepitaxially grown on si licon-doped n-type cubic boron nitride (c-BN) bulk crystal by microwav e plasma chemical vapor deposition. Utilizing selective etching of the boron-doped diamond layer to the c-BN substrate, a diamond/c-BN heter ojunction p-n diode was fabricated for the first time. A small reverse bias leakage current and more than five orders of rectification ratio were obtained for the diode.