HYDROGEN PASSIVATION OF HF-LAST CLEANED (100)SILICON SURFACES INVESTIGATED BY MULTIPLE INTERNAL-REFLECTION INFRARED-SPECTROSCOPY

The hydrogen passivation of (100) silicon surfaces is characterized as a function of the chemical treatment by means of multiple internal re flection infrared (IR) spectroscopy using a novel sample preparation m ethod. The samples are etched in different HF solutions (aqueous HF, H F/HCl/H2O, HF/acetic acid, HF/isopropyl/H2O, and buffered HF) and inve stigated with and without DI water rinsing. The stability of the surfa ces against oxidation and the buildup of a hydrocarbon contamination l ayer during storage in cleanroom air are examined. The IR peak at 2123 cm-1 is related to a coupling mode between dihydrides and neighboring monohydrides.