CHLORINE-ACTIVATED DIAMOND CHEMICAL-VAPOR-DEPOSITION

Citation
Cy. Pan et al., CHLORINE-ACTIVATED DIAMOND CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 141(11), 1994, pp. 3246-3249
Citations number
16
Categorie Soggetti
Electrochemistry
ISSN journal
00134651
Volume
141
Issue
11
Year of publication
1994
Pages
3246 - 3249
Database
ISI
SICI code
0013-4651(1994)141:11<3246:CDC>2.0.ZU;2-N
Abstract
A novel method of producing atomic hydrogen and the active carbon spec ies necessary for diamond chemical vapor deposition (CVD) has been dem onstrated. This method starts with the generation of atomic chlorine f rom the thermal dissociation of molecular chlorine in a resistively he ated graphite furnace at temperatures from 1300-1500-degrees-C. Atomic hydrogen and the carbon precursors are subsequently produced through rapid hydrogen abstraction reactions of atomic chlorine with molecular hydrogen and hydrocarbons at the point where they mix. It was found t hat the quality of the diamond deposits depends on both substrate temp eratures and H2/Cl2 mole ratios. Substrate temperatures are found to b e approximately 150-degrees lower than for a hydrogen/hydrocarbon hot filament system for similar growth rates.