LIQUID-CRYSTAL 1.8-IN DISPLAYS USING POLY-SI THIN-FILM TRANSISTORS WITH NOVEL STRUCTURE AND A STORAGE-CAPACITANCE ARRANGEMENT

We have fabricated 1.8-in., 86,400-pixel poly-Si thin-film-transistor (TFT) LCDs with a novel TFT structure and a Storage-capacitance (C-st) arrangement. The TFTs have a self-aligned offset structure that is ma de by a simple process without using an additional mask. With this str ucture, we have reduced the OFF current, and hence attained a high ON/ OFF current ratio of 10(7). A novel C-st line arrangement called ''mod ified C-st on gate'' was adopted. Gate lines and C-st lines are arrang ed alternately, and the (n-1)'th C-st line is connected to the n'th ga te line at the line's end. The C-st line works as backup for the gate line. Consequently, we have obtained TFT arrays with no line defects ( 240 gate lines). By using these techniques, we have succeeded in fabri cating a high-performance 1.8-in. poly-Si TFT-LCD panel for a projecti on TV.