MUONIUM CENTERS IN CRYSTALLINE SI AND GE UNDER ILLUMINATION

The charged state of implanted positive muons, Mu(+/-), formed at high temperatures undergoes fast spin relaxation in both Si and Ge under i llumination due to a cyclic charge-exchange reaction with photoinduced carriers. In Si, the neutral tetrahedral interstitial muonium state ( Mu(T)(0)) also collides effectively with carriers to induce reaction, while in Ge the neutral state is unreactive. In particular, in Si at l ow temperatures, the Mu(T)(0) center is rapidly converted into bond ce nter muonium (Mu(BC)(0)) With supervening fast spin relaxation under i llumination.