LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF THIN IN1-XGAXASYP1-Y LAYERS LATTICE-MATCHED TO INP

Growth studies enabled the deposition of In0.71Ga0.29As0.68P0.32 singl e quantum well structures with InP or In0.88Ga0.12As0.26P0.74 confinem ent layers lattice-matched to (001) InP by liquid phase epitaxy (LPE). Well widths in the order of 50-100 angstrom have been achieved using a conventional step cooling technique. The physical characterization h as demonstrated the capability of the employed method to produce multi layered heterostructures which display confined particles states; quan tum mechanically induced blue-shifts of the low temperature PL-emissio n up to 125 meV were measured. A remarkable reduction of the FWHM valu es of the shifted PL peaks was attained by optimization of the growth conditions.