THERMOELECTRIC-POWER OF INDIUM SESQUISULFIDE SINGLE-CRYSTALS

Authors
Citation
Mm. Nassary, THERMOELECTRIC-POWER OF INDIUM SESQUISULFIDE SINGLE-CRYSTALS, Crystal research and technology, 29(7), 1994, pp. 999-1004
Citations number
7
Categorie Soggetti
Crystallography
ISSN journal
02321300
Volume
29
Issue
7
Year of publication
1994
Pages
999 - 1004
Database
ISI
SICI code
0232-1300(1994)29:7<999:TOISS>2.0.ZU;2-C
Abstract
The investigation covers a temperature range from 200 to 450 K. Thermo electric power measurements of In2S3 crystals showed that all samples under investigation have a positive TEP in all temperature ranges, ind icating n-type conductivity for In2S3 crystals. The ratio of the elect ron and hole mobilities is mu(n)/mu(p) = 4.71. The effective mass of e lectrons m(n) is found to be 0.00008 x 10(-31) kg. The obtained effec tive masses of holes m(p) = 1.893 x 10(-31) kg. The diffusion coeffic ient for both carriers (electrons and holes) is evaluated to be 84.71 cm2/s and 17.985 cm2/s respectively. The mean free time between collis ion is estimated to be tau(n) = 1.7 x 10(-20) s, and tau(p) = 8.5 x 10 (-17)s. The estimated diffusion length for electrons is found to be L( n) = 1.2 x 10(-9) cm and L(p) = 3.9 x 10(-8) cm.