GAS ETCHING OF GAAS MONOCRYSTALLINE SUBSTRATES IN THE PRESENCE OF GA SOURCES AND IN SOURCES

Authors
POPOV AS HITOVA L ATANASOVA RK NIKOLOVA SL
Citation
As. Popov et al., GAS ETCHING OF GAAS MONOCRYSTALLINE SUBSTRATES IN THE PRESENCE OF GA SOURCES AND IN SOURCES, Crystal research and technology, 29(7), 1994, pp. 1021-1024
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
29
Issue
7
Year of publication
1994
Pages
1021 - 1024
Database
ISI
SICI code
0232-1300(1994)29:7<1021:GEOGMS>2.0.ZU;2-Y
Abstract
A special case of gas etching of GaAs substrates in the process of VPE in the presence of (Ga + In) source was investigated. The dependence of the etching rate on the source and the substrate temperature, and t he AsCl3 content in the gas flow was studied.