CHARACTERIZATION OF INDIUM-DOPED SNS2

Indium doping of tin disulfide (SnS2:In) was performed during crystal growth. Both doped and undoped SnS2 crystals exhibit very high electri cal resistivity. Thermopower and Hall measurements indicate p-type con ductivity for the In doped crystals, whereas n-type conductivity is fo und for undoped specimens. Photoluminescence measurements reveal the e xistence of a deep state in SnS2:In, most likely associated with the ( In)Sn acceptor. The results show that the luminescence properties can be associated with donor-acceptor recombination emission with strong p honon coupling. This coupling is analyzed in terms of the configuratio n coordinate (CC) model.