Indium doping of tin disulfide (SnS2:In) was performed during crystal
growth. Both doped and undoped SnS2 crystals exhibit very high electri
cal resistivity. Thermopower and Hall measurements indicate p-type con
ductivity for the In doped crystals, whereas n-type conductivity is fo
und for undoped specimens. Photoluminescence measurements reveal the e
xistence of a deep state in SnS2:In, most likely associated with the (
In)Sn acceptor. The results show that the luminescence properties can
be associated with donor-acceptor recombination emission with strong p
honon coupling. This coupling is analyzed in terms of the configuratio
n coordinate (CC) model.