STRAIN COMPENSATED INASP INP/INGAP MULTIPLE-QUANTUM-WELL FOR 1.5 MU-MWAVELENGTH/

Authors
JIANG XS YU PKL
Citation
Xs. Jiang et Pkl. Yu, STRAIN COMPENSATED INASP INP/INGAP MULTIPLE-QUANTUM-WELL FOR 1.5 MU-MWAVELENGTH/, Applied physics letters, 65(20), 1994, pp. 2536-2538
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
20
Year of publication
1994
Pages
2536 - 2538
Database
ISI
SICI code
0003-6951(1994)65:20<2536:SCIIMF>2.0.ZU;2-4
Abstract
We report metalorganic vapor phase epitaxy growth of InAs0.66P0.34/InP /In0.74Ga0.26P strain compensated multiple quantum wells (MQWs) at 1.5 mum wavelength. A composite InP/InGaP/InP barrier structure is used t o tune the net strain of the MQWs. Compared with InAs0.66P0.34/InP str ained MQWs grown under similar conditions, the InAs0.66P0.34/InP/In0.7 4Ga0.26P strain compensated MQWs show improvement in crystalline and o ptical quality. (C) 1994 American Institute of Physics.