HETEROEPITAXIAL GROWTH OF ZNO FILMS ON DIAMOND (111) PLANE BY MAGNETRON SPUTTERING

ZnO thin film has been epitaxially grown on the (111) plane of the dia mond substrate by rf magnetron sputtering at substrate temperature as low as 260-degrees-C. The crystallinity was examined by x-ray diffract ion and reflection high-energy electron diffraction. It was found that the smallest standard deviation angle estimated from the x-ray rockin g curve of the ZnO(0002) peak was 0.27-degrees whereas the mismatch of the lattice parameter between film and substrate is 28.8%. The epitax ial relationship between ZnO film and the diamond is determined as [11 2BAR0] ZnO//[1BAR01] diamond. (C) 1994 American Institute of Physics.