DETERMINATION OF HETEROJUNCTION BAND DISCONTINUITIES IN STRAINED ALXIN1-XP INP SYSTEMS/

Conduction and valence band discontinuities were determined in the str ained Al(x)In1-xP/InP heterojunction system by absorption measurements from multiquantum well (MQW) and superlattice (SL) structures. It was found that the conduction band offsets were 0.337 and 0.260 eV for sy stems having Al concentrations of x = 0.20 (MQW) and x = 0.15 (SL), re spectively. The valence band discontinuities were 85 and 49 meV for th e heavy-hole valence band and -29 and -35 meV for the light-hole valen ce band, respectively, i.e., the light-hole valence band of Al(x)In1-x P forms a staggered type II heterojunction with InP. (C) 1994 American Institute of Physics.