IMPROVEMENT OF GRAIN-SIZE AND DEPOSITION RATE OF MICROCRYSTALLINE SILICON BY USE OF VERY HIGH-FREQUENCY GLOW-DISCHARGE

The influence of the plasma excitation frequency on the growth conditi ons and the material properties of microcrystalline silicon prepared b y plasma enhanced chemical vapor deposition at low deposition temperat ure is investigated. It is found that an increase of the plasma excita tion frequency leads to a simultaneous increase of the growth rate, th e grain size, and the Hall mobility of microcrystalline silicon. This is attributed to an effective selective etching of disordered material creating more space to develop crystalline grains, while also more sp ecies for faster growth of the crystallites are available. (C) 1994 Am erican Institute of Physics.