GROWTH-CONDITIONS AFFECTING THE ELECTROCHEMICAL MECHANICAL STABILITY OF CARBON-FILMS PREPARED BY ION-ASSISTED EVAPORATION

Citation
J. Ullmann et al., GROWTH-CONDITIONS AFFECTING THE ELECTROCHEMICAL MECHANICAL STABILITY OF CARBON-FILMS PREPARED BY ION-ASSISTED EVAPORATION, Physica status solidi. a, Applied research, 145(2), 1994, pp. 299-309
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
145
Issue
2
Year of publication
1994
Pages
299 - 309
Database
ISI
SICI code
0031-8965(1994)145:2<299:GATEMS>2.0.ZU;2-A
Abstract
Carbon films are prepared on water cooled silicon and low carbon steel substrates by using the ion assisted evaporation technique with inert neon ions. For film characterization cyclovoltammetry for detecting t he corrosion protection potential of the films and dynamic indentation tests for measuring the microhardness of the films are discussed. Bes ides the thermal carbon particles condensation on the substrate, the a dditional ion bombardment can modify the resulting film structure and the material properties in a wide range. Examples of the influence of the growth conditions (film thickness, ion to neutral atom ratio, angl e of ion incidence, ion energy) on the film behaviour are discussed wi th respect to ion-solid interactions which probably affect the film fo rmation. In the conclusion an out-lock of possible further trends in t he use of thin carbon containing films for protection against corrosio n, wear, and friction are given. The important role of ion assisted de position methods for the solution of problems is shown.