OPTICAL AND PHOTOELECTRICAL PROPERTIES OF MU-C-SI LAYERS AND THE INFLUENCE OF SUBSEQUENT HYDROGENATION

Authors
KRANKENHAGEN R SCHMIDT M HENRION W SIEBER I SELLE B FLIETNER H
Citation
R. Krankenhagen et al., OPTICAL AND PHOTOELECTRICAL PROPERTIES OF MU-C-SI LAYERS AND THE INFLUENCE OF SUBSEQUENT HYDROGENATION, Physica status solidi. a, Applied research, 145(2), 1994, pp. 401-406
Citations number
5
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
145
Issue
2
Year of publication
1994
Pages
401 - 406
Database
ISI
SICI code
0031-8965(1994)145:2<401:OAPPOM>2.0.ZU;2-M
Abstract
Differently structured LPCVD-Si films are characterized by SEM, SIMS, optical transmission and reflection measurements, and photoconductivit y yield measurements. In comparison to crystalline Si the optical abso rption is high but the photoconductivity is poor. It is tried to impro ve the photoconductivity by post-annealing hydrogenation. The treatmen t with molecular hydrogen has only a small influence on the film prope rties.