QUANTITATIVE COMPOSITION ANALYSIS OF SEMICONDUCTING SILICIDE FILMS

Citation
Gu. Reinsperger et al., QUANTITATIVE COMPOSITION ANALYSIS OF SEMICONDUCTING SILICIDE FILMS, Physica status solidi. a, Applied research, 145(2), 1994, pp. 425-428
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
145
Issue
2
Year of publication
1994
Pages
425 - 428
Database
ISI
SICI code
0031-8965(1994)145:2<425:QCAOSS>2.0.ZU;2-0
Abstract
FeSi(x) films of various compositions prepared by magnetron sputtering are investigated by Rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES). RBS is used as a reference method f or quantitative AES analysis. Auger sensitivity factors for Si and Fe in FeSi(x) are determined experimentally. It is shown that the altered layer forming during sputtering of FeSi(x) is enriched in iron.