GROWTH-CONDITIONS, OPTICAL AND DIELECTRIC-PROPERTIES OF YTTRIUM-OXIDETHIN-FILMS

Citation
Af. Andreeva et al., GROWTH-CONDITIONS, OPTICAL AND DIELECTRIC-PROPERTIES OF YTTRIUM-OXIDETHIN-FILMS, Physica status solidi. a, Applied research, 145(2), 1994, pp. 441-446
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
145
Issue
2
Year of publication
1994
Pages
441 - 446
Database
ISI
SICI code
0031-8965(1994)145:2<441:GOADOY>2.0.ZU;2-S
Abstract
Thin Y2O3 films are grown by reactive synthesis, their optical and die lectric properties (electric resistivity, dielectric losses and permit tivity, electric strength, and refractive index) are measured. Their d ependence upon deposition parameters (deposition rate and reactive gas pressure) is investigated. Comparison of experimental data with those obtained by film growth modelling by the Monte-Carlo method suggests an insignificant influence of diffusion jumps and long-range order on the formation of Y2O3 films at low deposition temperature (300 to 400 K). The perspectives of Y2O3 films as dielectric layers in integrated circuits and high refractive layers for laser mirrors are shown.