A laser physico-chemical vapour deposition (LPCVD) technique was devel
oped based on the interaction of an ultraviolet laser beam with a boro
n nitride target and borazine gas to synthesize cubic boron nitride (C
BN) thin films on silicon substrates. The process involved a hybrid of
pulsed laser ablation (PLA) of a solid HBN target and chemical vapour
deposition (CVD) using borazine as a feed stock. The films were chara
cterized with scanning electron microscopy, X-ray diffraction and infr
ared spectroscopy. Results indicate that the thin films consisted of a
lmost single-crystalline CBN structures and that the film quality in t
erms of adherence, particulate density and smoothness was excellent. T
he purity and crystal structure of target material, laser beam wavelen
gth and energy fluence were the key variables that controlled the film
characteristics. In contrast to LPCVD, the conventional PLA method di
d not generate CBN films.