THE EFFECT OF ANNEALING ON THE RESISTANCE OF A P I/N STRUCTURE/

Authors
SERIN T SERIN N
Citation
T. Serin et N. Serin, THE EFFECT OF ANNEALING ON THE RESISTANCE OF A P I/N STRUCTURE/, Semiconductor science and technology, 9(11), 1994, pp. 2097-2100
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
11
Year of publication
1994
Pages
2097 - 2100
Database
ISI
SICI code
0268-1242(1994)9:11<2097:TEOAOT>2.0.ZU;2-L
Abstract
The purpose of this paper is to investigate the effect of annealing on the series resistance R(s) and the shunt resistance R(sh) of a p/i/n type solar cell made of a-Si:H thin films in a SnO2/a-SiC:H(p-type)/a- Si:H/a-Si:H(n-type)/Al sandwich structure. The series resistance and t he shunt resistance were determined from Dc current-voltage (I-V) char acteristics by means of Warashina's method. Thermal annealing carried out in the temperature range 70-175 degrees C showed that the series r esistance R(s) decreased and the shunt resistance R(sh) increased with increasing annealing temperature.