THE ENHANCEMENT OF QUANTUM-WELL INTERMIXING THROUGH REPEATED ION-IMPLANTATION

Authors
POOLE PJ PIVA PG BUCHANAN M AERS GC ROTH AP DION M WASILEWSKI ZR KOTELES ES CHARBONNEAU S BEAUVAIS J
Citation
Pj. Poole et al., THE ENHANCEMENT OF QUANTUM-WELL INTERMIXING THROUGH REPEATED ION-IMPLANTATION, Semiconductor science and technology, 9(11), 1994, pp. 2134-2137
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
11
Year of publication
1994
Pages
2134 - 2137
Database
ISI
SICI code
0268-1242(1994)9:11<2134:TEOQIT>2.0.ZU;2-#
Abstract
Quantum well (QW) intermixing has been performed using low-energy broa d-area ion implantation to increase the bandgap energy in a spatially selective manner. There is a maximum single dose beyond which further intermixing of the aws is impeded by damage to the semiconductor surfa ce. We demonstrate that this problem can be overcome by using a series of implants and rapid thermal anneals, with each rapid thermal anneal repairing the crystal surface. Using this technique we have observed shifts in optical bandgap for multiple implants greater than 2.5 times that observed for a single implant.