A COMPARISON OF CARBON AND ZINC DOPING IN GAAS ALGAAS LASERS BANDGAP-TUNED BY IMPURITY-FREE VACANCY DISORDERING/

Authors
AYLING SG BRYCE AC GONTIJO I MARSH JH ROBERTS JS
Citation
Sg. Ayling et al., A COMPARISON OF CARBON AND ZINC DOPING IN GAAS ALGAAS LASERS BANDGAP-TUNED BY IMPURITY-FREE VACANCY DISORDERING/, Semiconductor science and technology, 9(11), 1994, pp. 2149-2151
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
11
Year of publication
1994
Pages
2149 - 2151
Database
ISI
SICI code
0268-1242(1994)9:11<2149:ACOCAZ>2.0.ZU;2-B
Abstract
Bandgap tuning by impurity-free vacancy disordering was investigated o n carbon and zinc p-doped laser structures. Zinc diffused during annea ling and consequently only carbon-doped material lased. After annealin g, threshold current densities rose from 225 to 255 A cm(-2) due to an increase in the transparency current; the gain constant of the quantu m wells remained constant.