SPATIALLY-RESOLVED PHOTOMODULATED MICROWAVE-ABSORPTION AND THERMAL-WAVE IMAGES OF BORON-DOPED SILICON

Authors
VONGEISAU O MECKENSTOCK R SCHREIBER F PELZL J SEIDEL U WALTHER HG
Citation
O. Vongeisau et al., SPATIALLY-RESOLVED PHOTOMODULATED MICROWAVE-ABSORPTION AND THERMAL-WAVE IMAGES OF BORON-DOPED SILICON, Journal de physique. IV, 4(C7), 1994, pp. 133-136
Citations number
9
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
4
Issue
C7
Year of publication
1994
Pages
133 - 136
Database
ISI
SICI code
1155-4339(1994)4:C7<133:SPMAT>2.0.ZU;2-#
Abstract
A novel imaging technique for semiconductor samples, the photomodulate d microwave absorption (PMA), is presented. The sample is placed in a microwave cavity and illuminated with a modulated focussed laser beam. The excited photo carriers disturb the distribution of the high-frequ ency electric field in the cavity and therefore change its duality fac tor. This change is accessible to the experiment. First results on a s ilicon sample with well defined boron doped areas (10(15) cm(-2)) are presented and compared to Mirage experiments.