MEASUREMENT OF SURFACE RECOMBINATION OF EXCESS CARRIERS BY USE OF THEDOUBLE-MODULATION TECHNIQUE

Authors
KAPPLINGER S BUCHMANN F GEILER HD
Citation
S. Kapplinger et al., MEASUREMENT OF SURFACE RECOMBINATION OF EXCESS CARRIERS BY USE OF THEDOUBLE-MODULATION TECHNIQUE, Journal de physique. IV, 4(C7), 1994, pp. 145-149
Citations number
15
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
4
Issue
C7
Year of publication
1994
Pages
145 - 149
Database
ISI
SICI code
1155-4339(1994)4:C7<145:MOSROE>2.0.ZU;2-M
Abstract
The well characterized (100)-Si surface subjected to low energy ion ir radiation is used to demonstrate the capability of the contactless mea surement of the surface recombination velocity of excess carriers by a pplying the photothermal response technique under high vacuum conditio ns. During and after the processing the photothermal response is recor ded in the frequency domain. From the wide range frequency sweep surfa ce recombination velocities between 1 m/s up to 1000 m/s can be extrac ted.