THE INFLUENCE OF ION-IMPLANTATION AND HIGH-ENERGY PROTON IRRADIATION OF SEMICONDUCTORS ON A PHOTOTHERMAL SIGNAL

A photothermal technique with interferometrical detection was applied to obtain amplitude and phase images of ion-implanted and proton-irrad iated semiconductors. It was experimentally shown that ion implantatio n and radiation defects differently affect on the photothermal images of semiconductors by using weakly absorped laser radiation for heating . Oscillations observed by photothermal imaging was explained by inter ference of the heating light due to internal reflection and should be taken into account for right interpretation of the images.