ON THE USE OF THE MODULATED REFLECTANCE MICROSCOPY IN THE STUDY OF LASER-DIODE FACETS - DETECTION OF SURFACE-DEFECTS

Authors
MANSANARES AM ROGER JP FOURNIER D BOCCARA AC
Citation
Am. Mansanares et al., ON THE USE OF THE MODULATED REFLECTANCE MICROSCOPY IN THE STUDY OF LASER-DIODE FACETS - DETECTION OF SURFACE-DEFECTS, Journal de physique. IV, 4(C7), 1994, pp. 207-210
Citations number
8
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
4
Issue
C7
Year of publication
1994
Pages
207 - 210
Database
ISI
SICI code
1155-4339(1994)4:C7<207:OTUOTM>2.0.ZU;2-T
Abstract
InGaAsP/InP buried heterostructure lasers were investigated using refl ectance microscopy. Measurements were performed for both biased (curre nt modulation) and non-biased (modulated pump beam) device. Maps of th e facets of non-degraded and degraded lasers are presented and discuss ed.