ON MIRROR TEMPERATURE OF A SEMICONDUCTOR DIODE-LASER STUDIED WITH A PHOTOTHERMAL DEFLECTION METHOD

Authors
BERTOLOTTI M LIAKHOU G VOTI RL WANG RP SIBILIA C SYRBU AV YAKOVLEV VP
Citation
M. Bertolotti et al., ON MIRROR TEMPERATURE OF A SEMICONDUCTOR DIODE-LASER STUDIED WITH A PHOTOTHERMAL DEFLECTION METHOD, Journal de physique. IV, 4(C7), 1994, pp. 211-214
Citations number
4
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
4
Issue
C7
Year of publication
1994
Pages
211 - 214
Database
ISI
SICI code
1155-4339(1994)4:C7<211:OMTOAS>2.0.ZU;2-I
Abstract
The mirror temperature response of a diode laser to injection current is studied through the photodeflection method. A theoretical model is presented together with some experimental measurements for a AlGaAs qu antum well laser diode.