A. Egeaguillen et al., SPATIAL DISORDER DEPENDENCE OF THE CONDUCTANCE OF A RANDOM RESISTOR NETWORK, Physical review. B, Condensed matter, 50(17), 1994, pp. 12520-12523
We calculate the resistance of one-, two-, and three-dimensional local
ized systems in the hopping regime, simulated by random-resistor netwo
rks within the r-resistor model. The analysis of the logarithm of the
resistance as a function of the degree of spatial disorder reveals tha
t in one- and two-dimensional samples the resistance increases with di
sorder, while in three-dimensional samples the resistance decreases. W
e also study the fluctuations of the conductance from sample to sample
.