SPATIAL DISORDER DEPENDENCE OF THE CONDUCTANCE OF A RANDOM RESISTOR NETWORK

Authors
EGEAGUILLEN A ORTUNO M GARCIAMOLINA R
Citation
A. Egeaguillen et al., SPATIAL DISORDER DEPENDENCE OF THE CONDUCTANCE OF A RANDOM RESISTOR NETWORK, Physical review. B, Condensed matter, 50(17), 1994, pp. 12520-12523
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
50
Issue
17
Year of publication
1994
Pages
12520 - 12523
Database
ISI
SICI code
0163-1829(1994)50:17<12520:SDDOTC>2.0.ZU;2-T
Abstract
We calculate the resistance of one-, two-, and three-dimensional local ized systems in the hopping regime, simulated by random-resistor netwo rks within the r-resistor model. The analysis of the logarithm of the resistance as a function of the degree of spatial disorder reveals tha t in one- and two-dimensional samples the resistance increases with di sorder, while in three-dimensional samples the resistance decreases. W e also study the fluctuations of the conductance from sample to sample .