OBSERVATION OF THE NEGATIVE AND POSITIVE PERSISTENT PHOTOCONDUCTIVITYPHENOMENA IN SILICON PLANAR-DOPED GAAS

Authors
DASILVA MIN CORREA JA BEZERRA JC DEOLIVEIRA AG
Citation
Min. Dasilva et al., OBSERVATION OF THE NEGATIVE AND POSITIVE PERSISTENT PHOTOCONDUCTIVITYPHENOMENA IN SILICON PLANAR-DOPED GAAS, Solid state communications, 92(9), 1994, pp. 745-749
Citations number
32
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
92
Issue
9
Year of publication
1994
Pages
745 - 749
Database
ISI
SICI code
0038-1098(1994)92:9<745:OOTNAP>2.0.ZU;2-H
Abstract
Photo-Hall free electron concentrations were measured on MBE-grown sil icon planar-doped GaAs samples, for silicon nominal concentration in t he range of(1.4 to 88)x10(12) cm(-2). We found both positive and negat ive persistent photoconductivities (PPPC and NPPC), which were discuss ed based on the growth parameters. Time resolved PPC measurements show some evidence that the positive and negative PPC effects are related to different physical processes. The PPPC effect seems to be related t o the spatial charge separation and to the EL2 center and the NPPC eff ect to the DX center.