Hy. Chen et al., MERCURY CADMIUM TELLURIUM PHOTODETECTORS FABRICATED BY LIQUID-PHASE EPITAXY AND DOUBLE BORON IMPLANTATION FOR FIBER OPTIC COMMUNICATION, Solid state communications, 92(9), 1994, pp. 761-763
The p-type Hg0-3Cd0.7Te epilayers were grown on CdTe substrates by ope
n tube liquid phase epitaxy technique. The formation of n(+)-p junctio
n was made by double boron ion-implantation and post-thermal annealing
. The quantum efficiency was 0.43 and the detectivity was 2.1 x 10(11)
cm Hz(1/2) W-1 for the Hg0.3Cd0.7Te photodetector.