DEEP HIGH-DOSE ERBIUM IMPLANTATION OF LOW-LOSS SILICON OXYNITRIDE WAVE-GUIDES

Authors
CHELNOKOV AV LOURTIOZ JM BOUCAUD P BERNAS H CHAUMONT J PLOWMAN T
Citation
Av. Chelnokov et al., DEEP HIGH-DOSE ERBIUM IMPLANTATION OF LOW-LOSS SILICON OXYNITRIDE WAVE-GUIDES, Electronics Letters, 30(22), 1994, pp. 1850-1852
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
22
Year of publication
1994
Pages
1850 - 1852
Database
ISI
SICI code
0013-5194(1994)30:22<1850:DHEIOL>2.0.ZU;2-S
Abstract
Photoluminescence studies of low-loss SiON waveguides deeply (2.8MeV) implanted with erbium at concentrations up to 1atm.% are reported. Rap id thermal annealing at 900 degrees C is found to repair most of the i mplantation damage and results in a 5.3ms I-4(13/2) lifetime for 0.25a tm.% Er concentration. Measurements in 1atm.% doped samples show signi ficant erbium ion-ion interactions.