GUNN-EFFECT AND HIGH-INJECTION PHENOMENON IN HETEROJUNCTION BIPOLAR-TRANSISTORS

Authors
POSSE VA JALALI B
Citation
Va. Posse et B. Jalali, GUNN-EFFECT AND HIGH-INJECTION PHENOMENON IN HETEROJUNCTION BIPOLAR-TRANSISTORS, Electronics Letters, 30(22), 1994, pp. 1893-1894
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
22
Year of publication
1994
Pages
1893 - 1894
Database
ISI
SICI code
0013-5194(1994)30:22<1893:GAHPIH>2.0.ZU;2-P
Abstract
The transferred-electron effect in the collector region of heterojunct ion bipolar transistors is investigated. Conditions necessary for obse rvation of Gunn instabilities are analysed and it is shown that stabil ity of the conventional III-V HBT is ensured by the Kirk effect which occurs at a similar threshold current density as the Gunn effect.