PSEUDOMORPHIC GA0.2IN0.8P GA-0.47,IN0.53AS/INP HEMT GROWN BY MOVPE USING TBP AND TBA/

Authors
YANG YF HSU CC YANG ES
Citation
Yf. Yang et al., PSEUDOMORPHIC GA0.2IN0.8P GA-0.47,IN0.53AS/INP HEMT GROWN BY MOVPE USING TBP AND TBA/, Electronics Letters, 30(22), 1994, pp. 1894-1895
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
22
Year of publication
1994
Pages
1894 - 1895
Database
ISI
SICI code
0013-5194(1994)30:22<1894:PGGHGB>2.0.ZU;2-5
Abstract
A pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor grown by MOVPE using TBP and TBA is reported for the first time. The extrinsic transconductances of 480 and 620mS/mm with the max imum output current of 660 and 780mA/mm were achieved for the 1.2 mu m gate length device at 300 and 77K, respectively. These data are compa rable to those of AlInAs/GaInAs HEMTs grown by MOVPE and MBE indicatin g the good material quality.