REACTIVE ION ETCHING OF GALLIUM NITRIDE USING HYDROGEN BROMIDE PLASMAS

Authors
PING AT ADESIDA I KHAN MA KUZNIA JN
Citation
At. Ping et al., REACTIVE ION ETCHING OF GALLIUM NITRIDE USING HYDROGEN BROMIDE PLASMAS, Electronics Letters, 30(22), 1994, pp. 1895-1897
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
22
Year of publication
1994
Pages
1895 - 1897
Database
ISI
SICI code
0013-5194(1994)30:22<1895:RIEOGN>2.0.ZU;2-F
Abstract
The characteristics of the reactive ion etching (RIE) of gallium nitri de (GaN) have been investigated using HBr, 1:1 HBr:Ar, and 1:1 HBr:H-2 plasmas. Etch rates were found to increase with plasma self-bias volt age for all gas mixtures exceeding 60nm/min at -400 V for pure HBr. Hi gher etch rates were obtained for pure HBr than for HBr mixtures with Ar and H-2. Chamber pressure was also found to slightly affect etch ra tes for the pressure ranges investigated. The anisotropy of etched pro files was found to improve with increasing pressure. Smooth etched sur faces are also demonstrated.