SPIN-FLIP RAMAN-SCATTERING IN CDTE CD1-XMNXTE MULTIPLE-QUANTUM WELLS - A MODEL SYSTEM FOR THE STUDY OF ELECTRON-DONOR BINDING IN SEMICONDUCTOR HETEROSTRUCTURES/

The spin-flip Raman scattering of electrons bound to donors in CdTe/Cd 1-xMnxTe multiple-quantum-well structures at 1.6 K in magnetic fields up to 6 T has been studied for a range of samples forming two series i n which, first, the CdTe quantum-well width and second, the Cd1-xMnxTe barrier composition x were varied systematically. For structures with x < 0.1, two spin-flip Raman bands are observed, which can be assigne d to electrons located in the quantum wells and bound to donors locate d either in the quantum wells themselves or in the barriers of the str ucture. Measurements of the excitation spectra of the two Raman bands and of the quantum-well photoluminescence support this assignment. A v ariational calculation allows us to simulate the form of the observed spectra and also gives a quantitative description of the dependence of the Raman peak positions on the well width and barrier composition. T he calculation allows us to derive a value of 0.060+/-0.005 eV for the conduction-band offset when x=0.07.