RESISTANCE FLUCTUATIONS IN DIFFUSIVE TRANSPORT AT HIGH MAGNETIC-FIELDS IN NARROW SI TRANSISTORS

Citation
A. Morgan et al., RESISTANCE FLUCTUATIONS IN DIFFUSIVE TRANSPORT AT HIGH MAGNETIC-FIELDS IN NARROW SI TRANSISTORS, Physical review. B, Condensed matter, 50(16), 1994, pp. 12187-12190
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
50
Issue
16
Year of publication
1994
Pages
12187 - 12190
Database
ISI
SICI code
0163-1829(1994)50:16<12187:RFIDTA>2.0.ZU;2-1
Abstract
We have studied the aperiodic resistance fluctuations at millikelvin t emperatures in 90-nm-wide silicon metal-oxide-semiconductor field-effe ct transistors at high magnetic fields. In the absence of the quantum Hall effect, the correlation length of the fluctuations in magnetic fi eld shows dips commensurate with the Shubnikov-de Haas oscillations in the resistance. These can be explained by the formation of phase-cohe rent electron trajectories that contain both diffusive parts in the bu lk and skipping parts along the boundaries.